InGaAs 56Gbaud PIN & 4x56Gbaud Array PD Chip － OS-PD5016、OS-PD4x5016
1310nm 100G -400G PAM4 PIN PD芯片
Features
Data rate up to 400Gbps
High Responsivity
Low Capacitance
Low Dark Current
Top Illuminated planar structure
Diode on Semi Insulating Substrates
Anode/Cathode Pads on Front Side
Application
IEEE 100-400Gigabit Ethernet
400Gbps CWDM4,PAM4
Specification (Tc=25℃，Single Die)
PARAMETER | SYMBOL | MIN | TYP | MAX | UNIT | TEST CONDITIONS |
Active area diameter | D | 18 | μm | |||
Response range | λ | 900 | 1650 | nm | ||
Responsivity | R | 0.7 | 0.75 | A/W | λ=1310nm | |
0.75 | λ=1550nm | |||||
Dark current | ID | 0.02 | 0.50 | nA | VR=5V | |
Capacitance | C | 0.05 | 0.07 | pF | VR=2V, f=1MHz | |
Bandwidth | Bw | 36.0 | GHz | 3dB down, RL=50Ω | ||
Die size | 250X340 | μm | For Single Die | |||
250X1360 | For 1x4 Array | |||||
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產(chǎn)品應(yīng)用覆蓋光接入網(wǎng)、5G無線通信、光傳輸網(wǎng)、數(shù)據(jù)中心、微波光子、量子通信、屏下傳感、HDMI、氣體傳感、紅外成像、激光雷達等領(lǐng)域，并可提供不同響應(yīng)波長的各種大面積光探測器芯片及一維和二維光探測器陣列芯片等定制服務(wù)。
——產(chǎn)品應(yīng)用覆蓋光接入網(wǎng)、5G無線通信、光傳輸網(wǎng)、數(shù)據(jù)中心、微波光子、量子通信、屏下傳感、HDMI、氣體傳感、紅外成像、激光雷達等領(lǐng)域，并可提供不同響應(yīng)波長的各種大面積光探測器芯片及一維和二維光探測器陣列
