InGaAs 28Gbaud PIN & 4x28Gbaud Array PD Chip － OS-PD2818、OS-PD4x2818
50G -200G PAM4 PIN PD芯片
Features
Data rate up to 200Gbps
High Responsivity
Low Capacitance
Low Dark Current
Top Illuminated planar structure
Diode on Semi Insulating Substrates
Anode/Cathode Pads on Front Side
Application
IEEE 50-200Gigabit Ethernet
200Gbps CWDM4,PAM4
Specification (Tc=25℃，Single Die)
PARAMETER | SYMBOL | MIN | TYP | MAX | UNIT | TEST CONDITIONS |
Active area diameter | D | 18 | μm | |||
Response range | λ | 900 | 1650 | nm | ||
Responsivity | R | 0.8 | 0.90 | A/W | λ=1310nm | |
0.90 | λ=1550nm | |||||
Dark current | ID | 0.01 | 0.10 | nA | VR=5V | |
Capacitance | C | 0.06 | 0.09 | pF | VR=2V, f=1MHz | |
Bandwidth | Bw | 25.0 | GHz | 3dB down, RL=50Ω | ||
Die size | 250X340 | μm | For Single Die | |||
250X1360 | For 1x4 Array | |||||
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產(chǎn)品應用覆蓋光接入網(wǎng)、5G無線通信、光傳輸網(wǎng)、數(shù)據(jù)中心、微波光子、量子通信、屏下傳感、HDMI、氣體傳感、紅外成像、激光雷達等領域，并可提供不同響應波長的各種大面積光探測器芯片及一維和二維光探測器陣列芯片等定制服務。
——產(chǎn)品應用覆蓋光接入網(wǎng)、5G無線通信、光傳輸網(wǎng)、數(shù)據(jù)中心、微波光子、量子通信、屏下傳感、HDMI、氣體傳感、紅外成像、激光雷達等領域，并可提供不同響應波長的各種大面積光探測器芯片及一維和二維光探測器陣列
